RT1A060APTR
MOSFET P-CH 12V 6A 8TSSTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RT1A060APTR is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 12 V and a continuous Drain Current (Id) of 6A at 25°C. The specified Rds On (Max) is 19mOhm at 6A and 4.5V gate drive, with a recommended drive voltage range of 1.5V to 4.5V. The device offers a maximum power dissipation of 600mW (Ta) and operates at junction temperatures up to 150°C. Key electrical characteristics include a Gate Charge (Qg) of 80 nC (Max) at 4.5V and an Input Capacitance (Ciss) of 7800 pF (Max) at 6V. The mounting type is Surface Mount, with the Supplier Device Package specified as 8-TSST, and it is supplied in Tape & Reel (TR) packaging. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | -8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 6 V |
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