RT1A050ZPTR
MOSFET P-CH 12V 5A 8TSSTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RT1A050ZPTR is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 12V Drain-Source Voltage (Vdss) and a continuous drain current capability of 5A at 25°C (Ta). With a maximum on-resistance (Rds On) of 26mOhm at 5A and 4.5V Vgs, it offers low conduction losses. The RT1A050ZPTR supports gate drive voltages from 1.5V to 4.5V, with a threshold voltage (Vgs(th)) of 1V at 1mA. Its input capacitance (Ciss) is rated at a maximum of 2800pF at 6V, and gate charge (Qg) is 34nC at 4.5V. The MOSFET is housed in an 8-TSST surface-mount package, enabling compact board layouts. It operates efficiently across a wide temperature range, up to 150°C (TJ), and has a power dissipation of 600mW (Ta). This component is commonly utilized in consumer electronics, industrial automation, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 6 V |
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