RT1A045APTCR
MOSFET P-CH 12V 4.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RT1A045APTCR is a P-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 4.5A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 30mOhm at 4.5A and 4.5V gate drive. With a maximum power dissipation of 650mW (Ta), it is suitable for surface mount configurations. The RT1A045APTCR is supplied in an 8-TSST package and operates across a temperature range of -55°C to 150°C. Key parameters include a Gate Charge (Qg) of 40 nC at 4.5V and an Input Capacitance (Ciss) of 4200 pF at 6V. This MOSFET is utilized in various industrial applications including power management and control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 650mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | -8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 6 V |
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