RT1A040ZPTR
MOSFET P-CH 12V 4A TSST8Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RT1A040ZPTR is a P-Channel MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 4A at 25°C. The low on-resistance, specified as 30mOhm maximum at 4A and 4.5V Vgs, ensures minimal power loss during conduction. The MOSFET supports a wide gate drive voltage range from 1.5V to 4.5V, with a maximum gate-source voltage of ±10V. Key parameters include a gate charge (Qg) of 30nC at 4.5V and input capacitance (Ciss) of 2350pF maximum at 6V. The device is available in an 8-TSST package with a maximum power dissipation of 1.25W (Ta). This component is suitable for use in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 6 V |
Request a Quote
Clients Also Buy
R5009ANX
MOSFET N-CH 500V 9A TO220
RS1E240BNTB
MOSFET N-CH 30V 24A 8HSOP
SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STR
