RSY200N05TL
MOSFET N-CH 45V 20A TCPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSY200N05TL is an N-Channel Power MOSFET designed for demanding applications. This device features a 45 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Ta). The MOSFET exhibits a maximum power dissipation of 20W (Ta) and is housed in a compact TCPT3 surface mount package, suitable for tape and reel (TR) packaging. It operates effectively across a temperature range of -55°C to 150°C (TJ). The RSY200N05TL is commonly utilized in power management solutions, automotive electronics, and industrial control systems where high current handling and efficient switching are critical. Its robust construction and specified performance characteristics make it a reliable component for various power conversion and switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TCPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
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