RSU002N06T106
MOSFET N-CH 60V 250MA UMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSU002N06T106 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 250mA at 25°C ambient. Its low on-resistance (Rds On) of 2.4 Ohms is achieved at 250mA and 10V Vgs. The device boasts a maximum power dissipation of 200mW at 25°C ambient and an operating junction temperature of 150°C. Key electrical characteristics include a maximum input capacitance (Ciss) of 15 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2.3V at 1mA. It offers a wide gate-source voltage tolerance of ±20V. The RSU002N06T106 is supplied in a compact UMT3 package (SC-70, SOT-323) suitable for surface mounting and is provided on tape and reel. This component finds application in power management and general-purpose switching within consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | UMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15 pF @ 25 V |
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