RSS130N03FU6TB
MOSFET N-CH 30V 13A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSS130N03FU6TB is an N-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 13 A at 25°C. The Rds On is specified at a maximum of 8.1 mOhm at 13 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 35 nC maximum at 5 V, and input capacitance (Ciss) of 2000 pF maximum at 10 V. This device operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 2W. The package is an 8-SOP (8-SOIC) and is supplied on tape and reel. Applications for this MOSFET include power management and switching in various industrial and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 10 V |
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