RSS120N03FU6TB
MOSFET N-CH 30V 12A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number RSS120N03FU6TB, offers a 30V drain-to-source voltage and a continuous drain current of 12A at 25°C (Ta). This surface mount device, housed in an 8-SOP (8-SOIC) package, features a maximum power dissipation of 2W (Ta). Key parameters include a low Rds On of 10mOhm at 12A, 10V, and a gate charge of 25nC at 5V. Input capacitance (Ciss) is specified at a maximum of 1360pF at 10V. This MOSFET is suitable for applications requiring efficient power switching in automotive, industrial, and consumer electronics sectors. The operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 10 V |
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