RSS110N03TB
MOSFET N-CH 30V 11A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSS110N03TB is an N-Channel MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain current (Id) of 11 A at 25°C. The on-resistance (Rds On) is specified as a maximum of 10.7 mOhm at 11 A and 10 V gate drive. The MOSFET is housed in an 8-SOP package, suitable for surface mounting, and supports a maximum power dissipation of 2 W. Key parameters include a Gate Charge (Qg) of 17 nC at 5 V and an Input Capacitance (Ciss) of 1300 pF at 10 V. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
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