RSS110N03FU6TB
MOSFET N-CH 30V 11A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSS110N03FU6TB is a 30V N-Channel MOSFET designed for surface mount applications. This component offers a continuous drain current capability of 11A (Ta) at 25°C and a maximum power dissipation of 2W (Ta). Key electrical characteristics include a low on-resistance (Rds On) of 10.7mOhm at 11A and 10V, and a gate charge (Qg) of 17 nC at 5V. Input capacitance (Ciss) is specified at a maximum of 1300 pF at 10V. The device operates within a temperature range of 150°C (TJ) and is housed in an 8-SOIC (0.154", 3.90mm Width) package, supplied on tape and reel. This MOSFET is suitable for use in power management and switching applications across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
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