RSS105N03TB
MOSFET N-CH 30V 10.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number RSS105N03TB. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 10.5A at 25°C. The on-resistance (Rds On) is specified as 11.7mOhm maximum at 10.5A and 10V gate drive. Designed for surface mounting, it is supplied in an 8-SOP package (8-SOIC) on tape and reel. Key parameters include a gate charge (Qg) of 15 nC maximum at 5V and input capacitance (Ciss) of 1130 pF maximum at 10V. The maximum power dissipation is 2W. This component is utilized in various industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 10 V |
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