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RSS105N03FU6TB

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RSS105N03FU6TB

MOSFET N-CH 30V 10.5A 8SOP

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's RSS105N03FU6TB is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.5A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 11.7mOhm at 10.5A and 10V, facilitated by its advanced MOSFET technology. The RSS105N03FU6TB supports gate drive voltages from 4V to 10V, with a maximum gate-source voltage (Vgs) of 20V. Key electrical specifications include a gate charge (Qg) of 15nC at 5V and input capacitance (Ciss) of 1130pF at 10V. With a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for power management and switching circuits in the automotive and industrial sectors. It is supplied in an 8-SOP package, utilizing surface mount technology and delivered on tape and reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.5A (Ta)
Rds On (Max) @ Id, Vgs11.7mOhm @ 10.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1130 pF @ 10 V

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