RSS105N03FU6TB
MOSFET N-CH 30V 10.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RSS105N03FU6TB is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.5A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 11.7mOhm at 10.5A and 10V, facilitated by its advanced MOSFET technology. The RSS105N03FU6TB supports gate drive voltages from 4V to 10V, with a maximum gate-source voltage (Vgs) of 20V. Key electrical specifications include a gate charge (Qg) of 15nC at 5V and input capacitance (Ciss) of 1130pF at 10V. With a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for power management and switching circuits in the automotive and industrial sectors. It is supplied in an 8-SOP package, utilizing surface mount technology and delivered on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 10 V |
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