RSS100N03TB1
MOSFET N-CH 30V 10A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSS100N03TB1 is an N-Channel MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C. With a low on-resistance (Rds On) of 13.3mOhm at 10A and 10V, it minimizes power loss in high-current switching circuits. The gate charge (Qg) is 20 nC maximum at 5V, and input capacitance (Ciss) is 1070 pF maximum at 10V, facilitating efficient switching. The MOSFET is housed in an 8-SOP package with surface-mount capability, suitable for automated assembly. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. This component is commonly utilized in power management, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.3mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1070 pF @ 10 V |
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