RSS100N03FU6TB
MOSFET N-CH 30V 10A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSS100N03FU6TB is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 10A at 25°C (Ta). The on-resistance (Rds On) is specified at a maximum of 13mOhm at 10A and 10V Vgs. Key parameters include a gate charge (Qg) of 14 nC (max) at 5V Vgs and input capacitance (Ciss) of 1070 pF (max) at 10V Vds. The device supports gate-source voltages (Vgs) up to 20V, with a threshold voltage (Vgs(th)) of 2.5V (max) at 1mA. With a maximum power dissipation of 2W (Ta), it is housed in an 8-SOP (8-SOIC) surface mount package, supplied on tape and reel (TR). This component finds application in various sectors including automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1070 pF @ 10 V |
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