RSS095N05FU6TB
MOSFET N-CH 45V 9.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number RSS095N05FU6TB. This device features a drain-source voltage of 45V and a continuous drain current of 9.5A at 25°C. The N-Channel MOSFET exhibits a low on-resistance of 16mOhm at 9.5A and 10V gate-source voltage. It is supplied in an 8-SOP package, suitable for surface mounting. Key parameters include a gate charge of 26.5 nC at 5V and input capacitance of 1830 pF at 10V. Maximum power dissipation is rated at 2W. The device operates with a gate-source voltage range up to 20V. This component finds application in power management circuits within automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1830 pF @ 10 V |
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