RSS090P03FU7TB
MOSFET P-CH 30V 9A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel Power MOSFET, part number RSS090P03FU7TB. This 30V device features a continuous drain current (Id) of 9A at 25°C and a maximum power dissipation of 2W (Ta). With a low on-resistance (Rds On) of 14mOhm at 9A and 10V, it utilizes 10V gate drive. The input capacitance (Ciss) is 4000pF maximum at 10V, and gate charge (Qg) is 39nC maximum at 5V. The MOSFET is housed in an 8-SOIC package and is supplied on tape and reel. It is designed for operation up to a junction temperature of 150°C. This component is commonly found in automotive and industrial power management applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 10 V |
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