RSS090P03FU6TB
MOSFET P-CH 30V 9A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RSS090P03FU6TB is a P-Channel MOSFET with a drain-source voltage (Vdss) of 30V. This device features a continuous drain current (Id) of 9A at 25°C and a maximum power dissipation of 2W. The on-resistance (Rds On) is specified at 14mOhm maximum at 9A and 10V gate-source voltage. It has a gate charge (Qg) of 39 nC maximum at 5V and input capacitance (Ciss) of 4000 pF maximum at 10V. The RSS090P03FU6TB is housed in an 8-SOP package suitable for surface mounting and operates in a temperature range up to 150°C. This component is utilized in demanding applications within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 10 V |
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