RSS090N03FU6TB
MOSFET N-CH 30V 9A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RSS090N03FU6TB is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 9A at 25°C. The On-Resistance (Rds On) is specified at a maximum of 15mOhm at 9A and 10V Vgs. With a maximum power dissipation of 2W (Ta), it is suitable for thermally efficient designs. The device operates over a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a Gate Charge (Qg) of 15nC at 5V Vgs and Input Capacitance (Ciss) of 810pF at 10V Vds. The RSS090N03FU6TB is housed in an 8-SOP package, designed for surface mounting. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors requiring robust switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 10 V |
Request a Quote
Clients Also Buy
2SK2463T100
MOSFET N-CH 60V 2A MPT3
RSJ300N10TL
MOSFET N-CH 100V 30A LPTS
RSS060P05FU6TB
MOSFET P-CH 45V 6A 8SOP
