RSS085N05FU6TB
MOSFET N-CH 45V 8.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This Rohm Semiconductor N-Channel MOSFET, part number RSS085N05FU6TB, offers a 45V drain-source voltage and a continuous drain current capability of 8.5A at 25°C. It features a low on-resistance of 18mOhm at 8.5A and 10V Vgs. The device is housed in an 8-SOP package, suitable for surface mount applications. Key electrical characteristics include a gate charge of 21.4 nC maximum at 5V Vgs and an input capacitance of 1500 pF maximum at 10V Vds. The maximum power dissipation is rated at 2W. This component is utilized in various industrial and automotive applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 10 V |
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