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RSS070P05TB1

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RSS070P05TB1

MOSFET P-CH 45V 7A 8SOP

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor RSS070P05TB1 is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 45V and a continuous Drain Current (Id) of 7A at 25°C. The low on-resistance, specified as 27mOhm maximum at 7A and 10V Vgs, ensures minimal power loss during conduction. With a maximum power dissipation of 2W (Ta) and an operating temperature of up to 150°C, it is suitable for demanding thermal environments. The 8-SOP package provides a compact footprint for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 47.6 nC (max) at 5V Vgs and an Input Capacitance (Ciss) of 4100 pF (max) at 10V Vds. This component finds application in industrial automation, power supply units, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Rds On (Max) @ Id, Vgs27mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)45 V
Gate Charge (Qg) (Max) @ Vgs47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 10 V

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