RSS070P05FU6TB
MOSFET P-CH 45V 7A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSS070P05FU6TB is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 45V and a continuous Drain Current (Id) capability of 7A at 25°C. The device exhibits a low On-Resistance (Rds On) of 27mOhm at 7A and 10V Vgs. Its 8-SOP package facilitates surface mounting, with a maximum power dissipation of 2W. Key electrical parameters include a Gate Charge (Qg) of 47.6 nC at 5V and an Input Capacitance (Ciss) of 4100 pF at 10V Vds. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics systems requiring robust power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 47.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 10 V |
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