RSS070N05FU6TB
MOSFET N-CH 45V 7A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSS070N05FU6TB, an N-channel MOSFET, offers a drain-to-source voltage (Vdss) of 45V and a continuous drain current (Id) of 7A at 25°C. This device features a maximum power dissipation of 2W (Ta) and a low on-resistance (Rds On) of 25mOhm at 7A, 10V. The gate charge (Qg) is a maximum of 16.8 nC at 5V, with input capacitance (Ciss) at 1000 pF @ 10V. Designed for surface mounting, it is supplied in an 8-SOP package, specifically an 8-SOIC (0.154", 3.90mm Width), presented on tape and reel. This component is suitable for applications in automotive and industrial equipment requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
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