RSS065N03TB1
MOSFET N-CH 30V 6.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSS065N03TB1 is a 30V N-Channel Power MOSFET designed for surface mount applications. This device features a continuous drain current (Id) of 6.5A at 25°C, with a maximum power dissipation of 2W. The on-resistance (Rds On) is specified at 27mOhm maximum at 6.5A and 10V Vgs. Key parameters include a drain-to-source voltage (Vdss) of 30V, a gate-source voltage (Vgs) range of ±20V, and a gate charge (Qg) of 8.6 nC maximum at 5V. Input capacitance (Ciss) is 430 pF maximum at 10V Vds. The component operates at temperatures up to 150°C and is supplied in an 8-SOP package, commonly used in automotive and industrial power management applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
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