RSS065N03FU6TB
MOSFET N-CH 30V 6.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's RSS065N03FU6TB is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a 30 V drain-source breakdown voltage and a continuous drain current capability of 6.5 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 26 mOhm at 6.5 A and 10 V Vgs, with a gate threshold voltage (Vgs(th)) of 2.5 V at 1 mA. Key parameters include input capacitance (Ciss) of 430 pF (max) at 10 V Vds and gate charge (Qg) of 6.1 nC (max) at 5 V Vgs. The RSS065N03FU6TB is housed in an 8-SOP (SOIC) surface mount package with a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C. This MOSFET is suitable for use in power management circuits and various industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
