RSS060P05FU6TB
MOSFET P-CH 45V 6A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor RSS060P05FU6TB is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 45V and a continuous Drain Current (Id) of 6A at 25°C. Its low on-resistance is specified at 36mOhm maximum at 6A and 10V Vgs. Key electrical characteristics include a Gate Charge (Qg) of 32.2 nC maximum at 5V Vgs and an Input Capacitance (Ciss) of 2700 pF maximum at 10V Vds. The device is housed in an 8-SOP package and supports a maximum power dissipation of 2W. It is typically utilized in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 32.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 10 V |
Request a Quote
Clients Also Buy
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
R6530KNXC7G
650V 30A TO-220FM, HIGH-SPEED SW
R5009ANX
MOSFET N-CH 500V 9A TO220
