RSS050P03FU6TB
MOSFET P-CH 30V 5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, part number RSS050P03FU6TB, is a 30V device with a continuous drain current of 5A at 25°C. This surface-mount component, housed in an 8-SOP package, features a maximum power dissipation of 2W. The Rds On is specified at 42mOhm maximum at 5A and 10V Vgs. Key parameters include a gate charge of 13 nC at 5V and input capacitance of 1200 pF at 10V Vds. The threshold voltage (Vgs(th)) is 2.5V maximum at 1mA, with a maximum gate-source voltage of ±20V. The operating temperature range extends to 150°C (TJ). This device is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |
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