RSR025P03TL
MOSFET P-CH 30V 2.5A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RSR025P03TL is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 2.5 A at 25°C. The RSR025P03TL offers a low on-resistance (Rds On) of 98 mOhm maximum at 2.5 A and 10 V gate-source voltage, minimizing conduction losses. With a maximum power dissipation of 1W (Ta) and an operating junction temperature of 150°C, it is suitable for demanding thermal environments. The TSMT3 package provides a compact footprint for surface mount integration. Key parameters include a gate charge (Qg) of 5.4 nC maximum at 5 V and input capacitance (Ciss) of 460 pF maximum at 10 V. This MOSFET is commonly utilized in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 10 V |
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