RSR025N03TL
MOSFET N-CH 30V 2.5A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor RSR025N03TL is an N-Channel MOSFET designed for demanding applications. This surface mount component, packaged in a TSMT3 (SC-96) tape and reel configuration, features a 30V drain-to-source voltage and a continuous drain current capability of 2.5A at 25°C. With a maximum Rds(on) of 70mOhm at 2.5A and 10V Vgs, it offers efficient switching. The device operates over a temperature range of 150°C (TJ) and has a maximum power dissipation of 1W (Ta). Key parameters include a gate charge of 4.1 nC at 5V and input capacitance of 165 pF at 10V. This MOSFET is suitable for use in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 10 V |