RSR020P05TL
MOSFET P-CH 45V 2A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, part number RSR020P05TL, offers a 45V drain-source voltage and a continuous drain current of 2A at 25°C. This device features a maximum on-resistance of 190mOhm at 2A and 10V, with a gate threshold voltage of 3V at 1mA. The MOSFET has a gate charge of 4.5nC at 4.5V and an input capacitance of 500pF at 10V. It is packaged in a TSMT3 (SC-96) surface mount configuration, supplied on tape and reel. The operating junction temperature reaches 150°C, with a maximum power dissipation of 540mW. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 10 V |
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