RSR020P03TL
MOSFET P-CH 30V 2A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSR020P03TL is a P-channel MOSFET designed for general-purpose switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2A at 25°C (Ta), with a maximum power dissipation of 1W (Ta). The Rds On specification is a maximum of 120mOhm at 2A and 10V. It has a gate charge (Qg) of 4.3 nC maximum at 5V and input capacitance (Ciss) of 370 pF maximum at 10V. The RSR020P03TL is housed in a TSMT3 surface mount package (SC-96) and is supplied on tape and reel. This component is suitable for use in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 10 V |
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