RSR020N06TL
MOSFET N-CH 60V 2A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor RSR020N06TL is a 60 V N-Channel Power MOSFET designed for surface mount applications. This component, housed in a TSMT3 (SC-96) package, offers a continuous drain current capability of 2 A at 25°C (Ta) with a maximum power dissipation of 540 mW (Ta). Key electrical specifications include a Drain-to-Source Voltage (Vdss) of 60 V and a maximum On-Resistance (Rds On) of 170 mO at 2 A and 10 V gate drive. Gate charge (Qg) is rated at 4.9 nC maximum at 10 V, and input capacitance (Ciss) is 180 pF maximum at 10 V. This MOSFET is suitable for various industrial applications requiring efficient power switching. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
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