RSR015P03TL
MOSFET P-CH 30V 1.5A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor RSR015P03TL is a P-Channel MOSFET designed for efficient switching operations. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 1.5A at 25°C. With a maximum power dissipation of 1W (Ta) and a low on-resistance of 235mOhm at 1.5A and 10V Vgs, it is suitable for applications requiring minimal power loss. The device operates with drive voltages between 4V and 10V, and has a gate charge of 2.6 nC at 5V. Input capacitance (Ciss) is specified at a maximum of 190 pF at 10V Vds. The RSR015P03TL utilizes MOSFET technology and is housed in a TSMT3 (SC-96) surface mount package, supplied on tape and reel. This component finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 10 V |
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