RSR010N10TL
MOSFET N-CH 100V 1A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSR010N10TL is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 1A at 25°C. The Rds On is specified at a maximum of 520mOhm at 1A and 10V. The device operates at an ambient temperature up to 150°C (TJ) with a maximum power dissipation of 540mW (Ta). Key parameters include a Gate Charge (Qg) of 3.5 nC at 5V and an Input Capacitance (Ciss) of 140 pF at 25V. The TSMT3 package is supplied on tape and reel. This MOSFET is utilized in various industrial applications requiring efficient switching and power control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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