RSQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSQ045N03TR is an N-Channel MOSFET designed for robust performance in demanding applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 4.5 A at 25°C. With a maximum Rds On of 38 mOhm at 4.5 A and 10 V Vgs, it offers efficient switching characteristics. The device is housed in a TSMT6 (SC-95) surface mount package, also known as SOT-23-6 Thin, and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 9.5 nC maximum at 5 V and input capacitance (Ciss) of 520 pF maximum at 10 V Vds. The maximum power dissipation is rated at 600 mW (Ta). This MOSFET is suitable for power management and switching functions across various industries including automotive and consumer electronics. Operating temperature ranges up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 10 V |