RSQ035P03TR
MOSFET P-CH 30V 3.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor RSQ035P03TR is a P-Channel MOSFET designed for surface mounting in a TSMT6 (SC-95) package. This device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.5A at 25°C. With a maximum power dissipation of 1.25W (Ta), it is suitable for applications requiring efficient power switching. The on-resistance (Rds On) is specified at a maximum of 65mOhm at 3.5A and 10V, with drive voltages ranging from 4V to 10V. Key parameters include a gate charge (Qg) of 9.2 nC (max) at 5V and input capacitance (Ciss) of 780 pF (max) at 10V. It operates within a temperature range of 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. This component is commonly utilized in power management circuits across various industries. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 10 V |
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