RSQ035N03TR
MOSFET N-CH 30V 3.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSQ035N03TR is a 30V N-Channel MOSFET in a TSMT6 (SC-95) surface mount package. This device offers a continuous drain current of 3.5A at 25°C with a maximum power dissipation of 1.25W. The Rds(on) is specified at 62mOhm maximum at 3.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 7.4 nC maximum at 5V and input capacitance (Ciss) of 290 pF maximum at 10V. The MOSFET supports gate drive voltages from 4V to 10V with a maximum Vgs of 20V and a threshold voltage (Vgs(th)) of 2.5V maximum at 1mA. This component is suitable for applications in automotive and industrial sectors requiring efficient power switching. The part is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V |
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