RSQ030P03TR
MOSFET P-CH 30V 3A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, RSQ030P03TR, offers a 30V drain-source voltage and a continuous drain current of 3A at 25°C (Ta). This device features a maximum on-resistance of 80mOhm at 3A and 10V. The TSMT6 (SC-95) package facilitates surface mounting. With a gate charge of 6nC at 5V and input capacitance of 440pF at 10V, it is suitable for power management applications across automotive, industrial, and consumer electronics sectors. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 10 V |
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