RSQ025P03TR
MOSFET P-CH 30V 2.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSQ025P03TR is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 2.5A at 25°C, with a maximum power dissipation of 1.25W (Ta). The device offers a low on-resistance (Rds On) of 110mOhm at 2.5A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. Key parameters include a gate charge (Qg) of 4.4 nC at 5V and an input capacitance (Ciss) of 320 pF at 10V. Operating at junction temperatures up to 150°C, this MOSFET is housed in a TSMT6 (SC-95) package, suitable for surface mounting. It is supplied in tape and reel packaging. This component is commonly utilized in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 320 pF @ 10 V |
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