RSQ020N03TR
MOSFET N-CH 30V 2A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's RSQ020N03TR is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 2A at 25°C. The device offers a low on-resistance (Rds On) of 134mOhm at 2A and 10V, with drive voltages ranging from 4V to 10V. Key parameters include a Gate Charge (Qg) of 3.1 nC at 5V and an input capacitance (Ciss) of 110 pF at 10V. With a maximum power dissipation of 600mW (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for various power management applications. The TSMT6 (SC-95) package, also identified as SOT-23-6 Thin, is supplied in tape and reel. This component finds utility in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 134mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 10 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
