RSQ015P10TR
MOSFET P-CH 100V 1.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSQ015P10TR is a P-channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.5A at 25°C, with a maximum power dissipation of 600mW (Ta). The RSQ015P10TR exhibits a low on-resistance (Rds On) of 470mOhm at 1.5A and 10V gate-source voltage (Vgs), and a typical gate charge (Qg) of 17nC at 5V. It is housed in a TSMT6 (SC-95) surface mount package, also known as SOT-23-6 Thin, and is supplied on tape and reel (TR). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 470mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
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