RSJ10HN06TL
MOSFET N-CH 60V 100A LPTSManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RSJ10HN06TL is an N-Channel Power MOSFET designed for high-current, high-efficiency applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 100A at 25°C (Ta). The device offers a low on-resistance of 4.2mOhm maximum at 50A and 10V Vgs. With a maximum power dissipation of 100W (Tc), it is suitable for demanding thermal conditions. The gate charge is specified at 202 nC maximum at 10V Vgs, and input capacitance is 11000 pF maximum at 10V Vds. Operating at junction temperatures up to 150°C, this MOSFET utilizes a surface mount TO-263-3, D2PAK package. The RSJ10HN06TL is commonly employed in power supplies, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LPTS |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 202 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 10 V |
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