RSH125N03TB1
MOSFET N-CH 30V 12.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, RSH125N03TB1, is a 30V device in an 8-SOP package. This surface mount component features a continuous drain current of 12.5A at 25°C and a maximum power dissipation of 2W (Ta). The Rds On is specified at 9.1mOhm at 12.5A and 10V gate-source voltage. Key parameters include a 30V Drain to Source Voltage (Vdss), ±20V Vgs (Max), and a threshold voltage (Vgs(th)) of 2.5V at 1mA. Input capacitance (Ciss) is 1670pF (Max) at 10V, and gate charge (Qg) is 28nC (Max) at 5V. This MOSFET is suitable for applications in automotive and industrial power management. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
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