RSH110N03TB1
MOSFET N-CH 30V 11A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor RSH110N03TB1 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 11A at 25°C. The device offers a low On-Resistance (Rds On) of 10.7mOhm at 11A and 10V, minimizing conduction losses. Key parameters include a Gate Charge (Qg) of 17 nC maximum at 5V and an input capacitance (Ciss) of 1300 pF maximum at 10V. The RSH110N03TB1 is housed in an 8-SOP (Surface Mount) package with a maximum power dissipation of 2W. This MOSFET is suitable for use in power management, automotive, and industrial electronic systems requiring efficient switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
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