RSH090N03TB1
MOSFET N-CH 30V 9A SOP8Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RSH090N03TB1 is an N-Channel MOSFET designed for efficient power management applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 9A at 25°C. The Rds On (Max) is specified at 16mOhm at 9A, 10V, with drive voltages ranging from 4V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 15 nC at 5V and an input capacitance (Ciss) of 810 pF (Max) at 10V. The device is packaged in an 8-SOP (Surface Mount) configuration, specifically an 8-SOIC with a width of 3.90mm, supplied on tape and reel. The maximum power dissipation is rated at 2W (Ta), and it operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in industrial automation, consumer electronics, and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 10 V |
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