RSH070N05GZETB
MOSFET N-CH 45V 7A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's RSH070N05GZETB is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 45V and a continuous drain current (Id) of 7A at 25°C. The Rds(on) is specified at a maximum of 25mOhm at 7A and 10V gate-source voltage. With a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C, it offers robust thermal performance. The gate charge (Qg) is 16.8 nC at 5V, and input capacitance (Ciss) is 1000 pF at 10V. This surface mount component is supplied in an 8-SOP package, typically used in automotive and industrial power management systems. The drive voltage range is 4V to 10V, with a ±20V maximum gate-source voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
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