RSH065N06GZETB
MOSFET N-CH 60V 6.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's N-Channel Power MOSFET, RSH065N06GZETB, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 6.5A at 25°C. This device features a low on-resistance of 37mOhm maximum at 6.5A and 10V Vgs, with a typical gate charge of 16nC at 5V. The input capacitance (Ciss) is rated at 900pF maximum. Manufactured using MOSFET technology, it is packaged in an 8-SOP (8-SOIC) for surface mounting. The RSH065N06GZETB is suitable for applications in power management, industrial controls, and automotive systems. It operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
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