RSH065N03TB1
MOSFET N-CH 30V 6.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor RSH065N03TB1 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 6.5A at 25°C. With a maximum on-resistance (Rds On) of 27mOhm at 6.5A and 10V Vgs, it offers efficient power handling. The MOSFET is supplied in an 8-SOP package for surface mounting, with a maximum power dissipation of 2W. Key electrical parameters include a gate charge (Qg) of 8.6 nC at 5V and input capacitance (Ciss) of 430 pF at 10V. The RSH065N03TB1 is suitable for use in automotive and industrial power management systems. It operates across a temperature range of 150°C (TJ) and supports a gate-source voltage (Vgs) range of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
