RSF010P03TL
MOSFET P-CH 30V 1A TUMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSF010P03TL is a P-Channel MOSFET designed for surface mount applications. This device features a drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 1A at 25°C. The on-resistance (Rds On) is specified at a maximum of 350mOhm at 1A and 10V gate-source voltage. With a maximum power dissipation of 800mW (Ta) and an operating junction temperature of 150°C, it is suitable for power management in various electronic systems. The TUMT3 package offers efficient thermal performance for compact designs. This component is commonly utilized in automotive and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TUMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V |
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