RSD221N06TL
MOSFET N-CH 60V 22A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSD221N06TL is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 22A at 25°C (Tc). With a low on-resistance (Rds On) of 26mOhm at 22A and 10V, it minimizes conduction losses. The RSD221N06TL offers a maximum power dissipation of 20W at 25°C (Tc) and 850mW at 25°C (Ta). It operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 3V at 1mA. Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1500 pF at 10V. This component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (CPT3) package and is supplied on tape and reel. It is commonly utilized in automotive, industrial power control, and electric vehicle systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 10 V |
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