RSD201N10TL
MOSFET N-CH 100V 20A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSD201N10TL is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 20 A at 25°C (Tc). With a maximum Rds On of 46 mOhm at 20A and 10V, it offers efficient power handling. The device boasts a maximum junction temperature (TJ) of 150°C and power dissipation of 850 mW ambient (Ta) or 20 W at 25°C (Tc). Key electrical characteristics include a gate charge (Qg) of 55 nC at 10 V and input capacitance (Ciss) of 2100 pF at 25 V. The RSD201N10TL is supplied in a CPT3 package, identified as TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mounting. It is available in Tape & Reel (TR) packaging. This MOSFET is commonly utilized in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
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